The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 03, 2020

Filed:

Sep. 01, 2016
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventors:

Changfeng Li, Beijing, CN;

Xue Dong, Beijing, CN;

Xiaochuan Chen, Beijing, CN;

Haisheng Wang, Beijing, CN;

Yingming Liu, Beijing, CN;

Shengji Yang, Beijing, CN;

Xiaoliang Ding, Beijing, CN;

Weijie Zhao, Beijing, CN;

Wei Liu, Beijing, CN;

Pengpeng Wang, Beijing, CN;

Lei Wang, Beijing, CN;

Pengcheng Lu, Beijing, CN;

Jun Long, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06K 9/00 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 31/105 (2006.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
G06K 9/0004 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 29/78669 (2013.01); H01L 31/1055 (2013.01); H01L 27/14678 (2013.01);
Abstract

A fingerprint identification device and a manufacturing method thereof, an array substrate and a display apparatus are provided. The fingerprint identification device comprises first gate lines and read signal lines. The first gate lines and the read signal lines intersect with each other to define a plurality of fingerprint identification units, and each fingerprint identification unit is provided with a photosensitive element and a first transistor. The photosensitive element includes a first electrode layer, and a first doped semiconductor layer, a second doped semiconductor layer and a second electrode layer which are sequentially positioned on a surface of the first electrode layer.


Find Patent Forward Citations

Loading…