The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

May. 29, 2015
Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Toshihiko Takeda, Tokyo, JP;

Hiroshi Kawasaki, Tokyo, JP;

Katsunari Obata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C23C 16/04 (2006.01); C23C 14/04 (2006.01); C23C 14/24 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0011 (2013.01); C23C 14/042 (2013.01); C23C 16/042 (2013.01);
Abstract

A vapor deposition mask capable of correctly performing confirmation of whether a shape pattern of openings formed in a resin mask is normal or similar confirmation while satisfying both high definition and lightweight, a vapor deposition mask preparation body for obtaining the vapor deposition mask, a frame-equipped vapor deposition mask including the vapor deposition mask, and a method for producing an organic semiconductor element using the frame-equipped vapor deposition mask. The aforementioned problem is solved by using, in a vapor deposition mask including a metal mask in which a slit is formed and a resin mask in which an opening corresponding to a pattern to be produced by vapor deposition is formed at a position overlapping with the slit, the metal mask and the resin mask being stacked, the resin mask which has about 40% or less of light ray transmittance at a wavelength of about 550 nm.


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