The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Jun. 19, 2017
Applicant:
Iqe Plc, St. Mellons, Cardiff, GB;
Inventors:
Wang Nang Wang, Limpley Stoke, GB;
Andrew Clark, Mountain View, CA (US);
Rytis Dargis, Oak Ridge, NC (US);
Michael Lebby, San Francisco, CA (US);
Rodney Pelzel, Emmaus, PA (US);
Assignee:
IQE plc, St. Mellons, Cardiff, GB;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/20 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 23/66 (2006.01); H03H 9/02 (2006.01); H03H 9/54 (2006.01); H03H 9/56 (2006.01); H03H 3/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/20 (2013.01); H01L 23/66 (2013.01); H01L 29/2003 (2013.01); H01L 29/7787 (2013.01); H03H 3/02 (2013.01); H03H 9/02031 (2013.01); H03H 9/02102 (2013.01); H03H 9/02133 (2013.01); H03H 9/545 (2013.01); H03H 9/562 (2013.01); H03H 9/564 (2013.01); H03H 2003/021 (2013.01);
Abstract
Proposed is a layer structure () comprising a crystalline piezoelectric III-N layer () epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (). The rare earth oxide layer includes at least two discrete portions (), and the metal layer includes at least one metal portion () that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (), particularly suitable for RF filters.