The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Aug. 07, 2018
Applicant:
Silicon Genesis Corporation, Santa Clara, CA (US);
Inventors:
Theodore E. Fong, Pleasanton, CA (US);
Michael I. Current, San Jose, CA (US);
Assignee:
Silicon Genesis Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 21/762 (2006.01); H01L 21/822 (2006.01); H01L 25/00 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/76254 (2013.01); H01L 21/8221 (2013.01); H01L 25/50 (2013.01); H01L 27/0688 (2013.01); H01L 2225/1094 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.