The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Sep. 06, 2017
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Gerhard Prechtl, Sankt Jakob im Rosental, AT;
Gebhart Dippold, Finkenstein, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/8258 (2006.01); H01L 29/66 (2006.01); H01L 29/732 (2006.01); H01L 29/778 (2006.01); H01L 29/15 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8258 (2013.01); H01L 29/155 (2013.01); H01L 29/66272 (2013.01); H01L 29/66462 (2013.01); H01L 29/7322 (2013.01); H01L 29/7787 (2013.01); H01L 23/60 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the <111>-surface, and forming a HEMT-structure above the <111>-surface.