The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2020

Filed:

Nov. 30, 2018
Applicant:

Disco Corporation, Tokyo, JP;

Inventors:

Kota Fukaya, Tokyo, JP;

Chae Yong, Tokyo, JP;

Zhiwen Chen, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 23/544 (2006.01); B23K 26/064 (2014.01); B23K 26/046 (2014.01); B23K 26/0622 (2014.01); B23K 26/00 (2014.01); B23K 26/53 (2014.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/0006 (2013.01); B23K 26/046 (2013.01); B23K 26/064 (2015.10); B23K 26/0624 (2015.10); B23K 26/53 (2015.10); H01L 23/544 (2013.01);
Abstract

A wafer is divided along a plurality of division lines by applying a laser beam of such a wavelength as to be transmitted through the wafer, to form division start point modified layers along the division lines; and applying an external force to the wafer, to divide the wafer along the division lines, with the division start point modified layers as start points of division. Prior to forming the division start point modified layers on the back surface side of the wafer, the laser beam is applied at an output of not more than a first output, to form crack guide layers for guiding a crack extension direction as modified layers in the vicinity of the back surface. Thereafter the division start point modified layers are formed at positions equivalent to the positions of the crack guide layers.


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