The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Nov. 02, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Jeffrey P. Gambino, Portland, OR (US);
Mark D. Jaffe, Shelburne, VT (US);
Steven M. Shank, Jericho, VT (US);
Anthony K. Stamper, Williston, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/482 (2006.01); H01L 21/683 (2006.01); H01L 21/74 (2006.01); H01L 21/762 (2006.01); H01L 23/532 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76895 (2013.01); H01L 21/6835 (2013.01); H01L 21/743 (2013.01); H01L 21/76251 (2013.01); H01L 21/76898 (2013.01); H01L 23/4825 (2013.01); H01L 23/4827 (2013.01); H01L 23/53271 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 29/1087 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01);
Abstract
A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.