The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2020
Filed:
Mar. 03, 2017
Applicant:
Sunedison Semiconductor Limited, Singapore, SG;
Inventor:
Sasha Joseph Kweskin, St. Louis, MO (US);
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02274 (2013.01); H01L 21/324 (2013.01); H01L 27/1203 (2013.01);
Abstract
A method is provided for preparing a semiconductor-on-insulator structure comprising a silicon oxynitride layer having a gradient oxygen concentration.
Kweskin, Sasha. (2020). Semiconductor on insulator structure comprising a plasma oxide layer and method of manufacture thereof (U.S. Patent No. 10573550). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10573550
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile