The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

May. 28, 2019
Applicant:

Nexgen Power Systems, Inc., Santa Clara, CA (US);

Inventors:

Isik C. Kizilyalli, San Francisco, CA (US);

Dave P. Bour, Cupertino, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

Gangfeng Ye, Fremont, CA (US);

Assignee:

NEXGEN POWER SYSTEMS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/861 (2006.01); H01L 21/02 (2006.01); H01L 21/76 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66204 (2013.01); H01L 21/0243 (2013.01); H01L 21/0254 (2013.01); H01L 21/02389 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02634 (2013.01); H01L 21/7605 (2013.01); H01L 29/045 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/6609 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/0649 (2013.01);
Abstract

A method of fabricating an electronic device includes providing a III-V substrate having a hexagonal crystal structure and a normal to a growth surface characterized by a misorientation from the <0001> direction of between 0.15° and 0.65°. The method also includes growing a first III-V epitaxial layer coupled to the III-V substrate and growing a second III-V epitaxial layer coupled to the first III-V epitaxial layer. The method further includes forming a first contact in electrical contact with the III-V substrate and forming a second contact in electrical contact with the second III-V epitaxial layer.


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