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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10566325 B1

PDFFull Text
Date of Patent:
Feb. 18, 2020

Filed:

Aug. 20, 2018

Semiconductor device

Applicant:

Rohm Co., Ltd., Kyoto-shi, Kyoto, JP;

Inventors:

Kenji Nishida, Kyoto, JP;

Shinpei Ohnishi, Kyoto, JP;

Kentaro Nasu, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Mohammed R Alam

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/866 (2006.01); H01L 29/739 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0635 (2013.01); H01L 27/0629 (2013.01); H01L 29/0615 (2013.01); H01L 29/0646 (2013.01); H01L 29/0649 (2013.01); H01L 29/423 (2013.01); H01L 29/42368 (2013.01); H01L 29/66106 (2013.01); H01L 29/7397 (2013.01); H01L 29/7808 (2013.01); H01L 29/7813 (2013.01); H01L 29/866 (2013.01); H01L 29/0623 (2013.01); H01L 29/0692 (2013.01); H01L 29/16 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/407 (2013.01); H01L 29/66712 (2013.01);
Abstract

A semiconductor device, including a semiconductor layer of a first conductivity type, having a main surface with a diode trench formed therein, an inner wall insulating film, including a side wall insulating film, formed along side walls of the diode trench, and a bottom wall insulating film, formed along a bottom wall of the diode trench and having a thickness greater than a thickness of the side wall insulating film, and a bidirectional Zener diode, formed on the bottom wall insulating film inside the diode trench and having a pair of first conductivity type portions and at least one second conductivity type portion formed between the pair of first conductivity type portions.

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