The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

May. 18, 2017
Applicant:

General Electric Company, Schenectady, NY (US);

Inventors:

Peter Almern Losee, Clifton Park, NY (US);

Alexander Viktorovich Bolotnikov, Niskayuna, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 23/64 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 23/647 (2013.01); H01L 29/0696 (2013.01); H01L 29/1608 (2013.01); H01L 21/8213 (2013.01);
Abstract

A semiconductor power conversion device includes a plurality of device cells in different portions of the active area, each including a respective gate electrode. The device includes a gate pad having a plurality of integrated resistors, each having a respective resistance. The device includes a first gate bus extending between the gate pad and the plurality of gate electrodes in a first portion of the active area. The plurality of gate electrodes in the first area is electrically connected to an external gate connection via a first integrated resistor and the first gate bus, and wherein the plurality of gate electrodes in a second portion of the active area is electrically connected to the external gate connection via a second integrated resistor, wherein the first and second integrated resistors have substantially different respective resistance values.


Find Patent Forward Citations

Losee, Peter. (2020). Integrated gate resistors for semiconductor power conversion devices (U.S. Patent No. 10566324). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10566324

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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