The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2020
Filed:
Aug. 29, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Jiehui Shu, Clifton Park, NY (US);
Jinping Liu, Ballston Lake, NY (US);
Rui Chen, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31051 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract
Methods of multiple patterning. First and second mandrel lines are formed on a patternable layer. Sidewall spacers are formed on the patternable layer adjacent to the first mandrel line and adjacent to the second mandrel line. A portion of the first mandrel line is removed to form a gap in the first mandrel line. A gapfill material is deposited in the gap in the first mandrel line. The gapfill material and sidewall spacers are composed of the same material.