The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2020

Filed:

Jul. 16, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Maximillian Clemons, Sunnyvale, CA (US);

Michel Ranjit Frei, Palo Alto, CA (US);

Mahendra Pakala, Fremont, CA (US);

Mehul B. Naik, San Jose, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Y. Yieh, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02337 (2013.01); H01L 21/02123 (2013.01); H01L 21/02271 (2013.01); H01L 21/02304 (2013.01);
Abstract

Embodiments of the present disclosure generally relate to a film treatment process. In one embodiment, a transition metal oxide layer including a dopant is deposited on a substrate. After the doped transition metal oxide layer is deposited, a high pressure annealing process is performed on the doped transition metal oxide layer to densify the doped transition metal oxide without outgassing of the dopant. The high pressure annealing process is performed in an ambient environment including the dopant and at a pressure greater than 1 bar.


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