Memory device and program/erase method therefor

Abstract

A memory device is provided and includes a status register, a memory array, a memory controller, an interface control circuit, and a write control logic circuit. The status register stores a plurality of status bits and a first threshold. The interface control circuit is controlled by the memory controller to perform a data program/erase operation on the memory array and re-program/re-erase the memory array in a retry mode when the data program/erase operation is not complete. The write control logic circuit counts the number of times the memory array is re-programmed/re-erased in the retry mode to generate a retry counting value, compares the retry counting value with the first threshold to generate a result signal. The status register updates a result bit included in the status bits according to the result signal. The memory controller determines whether the data program/erase operation is successful according to the result bit.