The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Dec. 05, 2018
United Microelectronics Corp., Hsinchu, TW;
Hsu Ting, Tainan, TW;
Chia-Ming Kuo, Kaohsiung, TW;
Fu-Jung Chuang, Kaohsiung, TW;
Chun-Wei Yu, Tainan, TW;
Po-Jen Chuang, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor device comprises at least one gate structure disposed on a substrate; a first dielectric layer disposed on the substrate and contacting an outer sidewall of the at least one gate structure; a second dielectric layer having a L shape disposed on the first dielectric layer and contacting the outer sidewall of the at least one gate structure; an etch stop layer contacting the second dielectric layer, the first dielectric layer and the substrate, wherein the second dielectric layer has an upper portion and a lower portion contacting the upper portion, the upper portion extends along the outer sidewall, the lower portion extends from the outer sidewall to the etch stop layer; and an air gap between the second dielectric layer and the etch stop layer; wherein the first dielectric layer and the lower portion of the second dielectric layer have a same width.