The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Nov. 22, 2016
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Yutaka Fukui, Tokyo, JP;
Katsutoshi Sugawara, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Kazuya Konishi, Tokyo, JP;
Kohei Adachi, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Abstract
A gate connection layer () includes a portion placed on an outer trench (TO) with a gate insulating film () being interposed. A first main electrode () includes a main contact (CS) electrically connected to a well region () and a first impurity region () within an active region (), and an outer contact (CO) being spaced away from the active region () and in contact with a bottom face of the outer trench (TO). A trench-bottom field relaxing region () is provided in a drift layer (). A trench-bottom high-concentration region () has an impurity concentration higher than that of the trench-bottom field relaxing region (), is provided on the trench-bottom field relaxing region (), and extends from a position where it faces the gate connection layer () with the gate insulating film () being interposed, to a position where it is in contact with the outer contact (CO) of the first main electrode ().