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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10559650 B1

PDFFull Text
Date of Patent:
Feb. 11, 2020

Filed:

Jul. 06, 2018

Trench capacitor with warpage reduction

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Jiao Jia, Chengdu, CN;

Zhipeng Feng, Sichuan, CN;

He Lin, Frisco, TX (US);

Yunlong Liu, Chengdu, CN;

Manoj Jain, Plano, TX (US);

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Tong-Ho Kim

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/3215 (2006.01); H01L 21/3213 (2006.01); H01L 23/495 (2006.01); H01L 23/00 (2006.01); H01L 21/3205 (2006.01); H01L 25/18 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 21/0257 (2013.01); H01L 21/0262 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 21/30604 (2013.01); H01L 21/32055 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/32155 (2013.01); H01L 21/76831 (2013.01); H01L 23/49503 (2013.01); H01L 23/49575 (2013.01); H01L 23/562 (2013.01); H01L 25/18 (2013.01); H01L 21/02255 (2013.01); H01L 24/40 (2013.01); H01L 24/48 (2013.01); H01L 29/7802 (2013.01); H01L 2224/40245 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A trench capacitor includes a plurality of trenches in a doped semiconductor surface layer of a substrate. At least one dielectric layer lines a surface of the plurality of trenches. A second polysilicon layer that is doped is on a first polysilicon layer that is on the dielectric layer which fills the plurality of trenches. The second polysilicon layer has a higher doping level as compared to the first polysilicon layer.

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Jia, Jiao. (2020). Trench capacitor with warpage reduction (U.S. Patent No. 10559650). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10559650

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