The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Dec. 21, 2018
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Fang-Wen Liu, New Taipei, TW;

Tseng-Fu Lu, New Taipei, TW;

Wei-Ming Liao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0274 (2013.01); H01L 27/0277 (2013.01); H01L 27/0288 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01);
Abstract

The present disclosure provides a semiconductor ESD protection device. The semiconductor ESD protection device includes a substrate including a first conductivity type, a gate formed on the substrate, a source region and a drain region formed in the substrate, and a body region formed in the substrate. The substrate and the body region include a first conductivity type. The source region and the drain region include a second conductivity type. And the first conductivity type and the second conductivity type are complementary to each other. The body region is electrically connected to the gate.


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