The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Aug. 16, 2019
Applicant:

Ningbo Semiconductor International Corporation, Ningbo, CN;

Inventor:

Xiaochuan Wang, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 27/12 (2006.01); H01L 23/66 (2006.01); H01L 21/84 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3672 (2013.01); H01L 21/4882 (2013.01); H01L 21/84 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01);
Abstract

A radio frequency integrated circuit (RFIC) device and a method for fabricating same are disclosed. The RFIC device includes: a first semiconductor layer having a first surface, a second surface and a thickness of smaller than 3 μm; a first dielectric layer on the first surface of the first semiconductor layer; a semiconductor component within the first semiconductor layer and the first dielectric layer; a second dielectric layer on the second surface of the first semiconductor layer, the second dielectric layer having a thickness of smaller than 1 μm; and a sheet-like heat sink that is formed on the surface of the second dielectric layer opposite to the first semiconductor layer for dissipating heat from the semiconductor component. Efficient dissipation of heat from an RF transistor to a certain extent can be achieved by the RFIC device.


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