The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Mar. 30, 2018
Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Zhenlei Shen, Milpitas, CA (US);

Pitamber Shukla, Milpitas, CA (US);

Philip Reusswig, Mountain View, CA (US);

Niles N. Yang, Mountain View, CA (US);

Anubhav Khandelwal, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/04 (2006.01); G11C 16/16 (2006.01); G11C 29/50 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/34 (2013.01); G11C 16/0483 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01); G11C 29/50004 (2013.01); G11C 2029/5004 (2013.01);
Abstract

Apparatuses, systems, methods, and computer program products for dynamically determining boundary word line voltage shift are presented. An apparatus includes an array of non-volatile memory cells and a controller. A controller includes a trigger detection component that is configured to detect a trigger condition associated with a last programmed word line of a partially programmed erase block of an array of non-volatile memory cells. A controller includes a voltage component that is configured to determine a read voltage threshold for a last programmed word line of a partially programmed erase block in response to a trigger condition. A controller includes a voltage shift component that is configured to calculate, dynamically, a read voltage threshold shift for a last programmed word line based on a determined read voltage threshold for the last programmed word line and a baseline read voltage threshold.


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