The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Aug. 06, 2018
Applicant:

Lattice Semiconductor Corporation, Portland, OR (US);

Inventor:

Ronald L. Cline, San Jose, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 14/00 (2006.01); H03K 19/1776 (2020.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G11C 14/0081 (2013.01); H03K 19/1776 (2013.01); G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01);
Abstract

One aspect relates to a memory circuit that has a programmable non-volatile memory (NVM) cell configured to generate an NVM output signal indicative of a program state of the NVM cell and to configure a volatile output based on the program state of the NVM cell. The NVM cell comprises a first magnetic tunnel junction (MTJ) device, a first select device connected in series with the first MTJ device at a first node, and a first pass device. The memory circuit also may have a programmable (independently of the NVM cell) volatile memory (VM) cell configured to receive the NVM output signal at a VM input node and to generate a VM output signal indicative of the program state of the VM cell.


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