The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2020

Filed:

Jan. 24, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Satoshi Taga, Miyagi, JP;

Yoshiyuki Kobayashi, Miyagi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); C23C 4/08 (2016.01); C23C 16/458 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
C23C 4/08 (2013.01); C23C 16/4581 (2013.01); H01L 21/683 (2013.01); H01L 21/687 (2013.01);
Abstract

A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.


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