The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Jun. 17, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Aveek Nath Chatterjee, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); H02N 2/18 (2006.01); H03H 3/007 (2006.01); H03H 9/02 (2006.01); H03H 9/17 (2006.01); H02N 2/00 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H02N 2/188 (2013.01); H02N 2/22 (2013.01); H03H 3/0077 (2013.01); H03H 9/02338 (2013.01); H03H 9/17 (2013.01); H03H 2009/02165 (2013.01); H03H 2009/155 (2013.01);
Abstract

Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.


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