The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Jun. 28, 2018
Applicant:

Silanna Uv Technologies Pte Ltd, Singapore, SG;

Inventors:

Johnny Cai Tang, Baulkham Hills, AU;

Petar Atanackovic, Henley Beach South, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01S 5/227 (2006.01); H01S 5/323 (2006.01); H01S 5/20 (2006.01); H01S 5/10 (2006.01); H01S 5/065 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2275 (2013.01); H01L 33/06 (2013.01); H01S 5/0655 (2013.01); H01S 5/1064 (2013.01); H01S 5/2004 (2013.01); H01S 5/32341 (2013.01);
Abstract

A light emitting device includes a substrate, a buffer layer, a first active layer, and a plurality of mesa regions. A portion of the first active layer includes a first electrical polarity. The plurality of mesa regions includes at least a portion of the first active layer, a light emitting region on the portion of the first active layer, and a second active layer on the light emitting region. A portion of the second active layer includes a second electrical polarity. The light emitting region is configured to emit light which has a target wavelength between 200 nm to 300 nm. A thickness of the light emitting region is a multiple of the target wavelength, and a dimension of the light emitting region parallel to the substrate is smaller than 10 times the target wavelength, such that the emitted light is confined to fewer than 10 transverse modes.


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