The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Oct. 17, 2016
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chih-Chiang Lu, Hsinchu, TW;

Yi-Ming Chen, Hsinchu, TW;

Chun-Yu Lin, Hsinchu, TW;

Ching-Pei Lin, Hsinchu, TW;

Chung-Hsun Chien, Hsinchu, TW;

Chien-Fu Huang, Hsinchu, TW;

Hao-Min Ku, Hsinchu, TW;

Min-Hsun Hsieh, Hsinchu, TW;

Tzu-Chieh Hsu, Hsinchu, TW;

Assignee:

Epistar Corporation, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 21/683 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 33/0095 (2013.01); H01L 33/62 (2013.01); H01L 2221/68318 (2013.01); H01L 2221/68363 (2013.01); H01L 2221/68381 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A semiconductor device comprises a substrate, a first semiconductor unit on the substrate, and an first adhesion structure between the substrate and the first semiconductor unit, and directly contacting the first semiconductor unit and the substrate, wherein the first adhesion structure comprises an adhesion layer and a sacrificial layer, and the adhesion layer and the sacrificial layer are made of different materials, and wherein an adhesion between the first semiconductor unit and the adhesion layer is different from that between the first semiconductor unit and the sacrificial layer.


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