The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Aug. 03, 2018
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
International Business Machines Corporation, Yorktown Heights, NY (US);
Remi Coquand, Les Marches, FR;
Nicolas Loubet, Guilderland, NY (US);
Shay Reboh, Grenoble, FR;
Robin Chao, Cohoes, NY (US);
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris, FR;
INTERNATIONAL BUSINESS MACHINES CORPORATION, Yorktown Heights, NY (US);
Abstract
A method is provided of fabricating a microelectronic device including a semiconductor structure provided with semiconductor bars positioned above one another, the method including the following steps: creating, on a substrate, a stacked structure including an alternation of first bars containing a first material and having a first critical dimension and second bars containing a second material, the second material being a semiconductor, the second bars having a second critical dimension greater than the first critical dimension, then, surface doping protruding lateral portions of the second bars before forming a source and drain block on the portions.