The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Feb. 20, 2018
Micron Technology, Inc., Boise, ID (US);
Fatma Arzum Simsek-Ege, Boise, ID (US);
Diem Thy N. Tran, Garden City, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method used in forming an array of elevationally-extending transistors comprises forming spaced lower conductive lines over a substrate. A gate insulator is formed in openings that are individually directly above individual of the lower conductive lines. The openings are formed into laterally-spaced lines comprising sacrificial material and are spaced longitudinally there-along. Channel material is formed in the individual openings laterally adjacent the gate insulator and is electrically coupled to the individual lower conductive line there-below. The sacrificial material is replaced with conductive-gate material. Other methods are disclosed including arrays of elevationally-extending transistors independent of method of manufacture.