The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Apr. 27, 2016
Applicants:
Jin-woo Han, San Jose, CA (US);
Yuniarto Widjaja, Cupertino, CA (US);
Zvi Or-bach, San Jose, CA (US);
Dinesh Maheshwari, Fremont, CA (US);
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Inventors:
Jin-Woo Han, San Jose, CA (US);
Yuniarto Widjaja, Cupertino, CA (US);
Zvi Or-Bach, San Jose, CA (US);
Dinesh Maheshwari, Fremont, CA (US);
Assignee:
Zeno Semiconductor, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); H01L 27/24 (2006.01); H01L 27/12 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 29/32 (2006.01); H01L 21/265 (2006.01); H03K 19/20 (2006.01); H03K 19/21 (2006.01); H01L 29/06 (2006.01); H03K 19/0948 (2006.01); G11C 16/04 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1087 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); H01L 27/0218 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1203 (2013.01); H01L 27/1211 (2013.01); H01L 27/2436 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/1095 (2013.01); H01L 29/42356 (2013.01); H01L 29/785 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/0408 (2013.01); G11C 16/0466 (2013.01); G11C 2213/79 (2013.01); H01L 21/26513 (2013.01); H01L 29/0649 (2013.01); H01L 29/32 (2013.01); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H03K 19/0948 (2013.01); H03K 19/20 (2013.01); H03K 19/21 (2013.01);
Abstract
A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.