The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Dec. 11, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yan-Jhih Huang, Yilan County, TW;

Chun-Yuan Hsu, Kaohsiung, TW;

Chien-Chung Chen, Kaohsiung, TW;

Yung-Hsieh Lin, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 28/87 (2013.01); H01L 28/40 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A metal-insulator-metal (MIM) capacitor includes a semiconductor substrate and a capacitor device. The capacitor device includes a first conductor upright on the semiconductor substrate, a second conductor upright on the semiconductor substrate, and an insulator disposed used for insulating the first conductor from the second conductor. In a method for fabricating the capacitor device, a mask including a test line pattern and a capacitor pattern with a first trench pattern and a second trench pattern is used to form a test line and the first conductor and the second conductor of the capacitor device, thereby decreasing the cost of for fabricating the MIM capacitor.


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