The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Oct. 09, 2018
Applicant:

Microsemi Soc Corp., San Jose, CA (US);

Inventor:

John L. McCollum, Orem, UT (US);

Assignee:

Microsemi SoC Corp., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/0011 (2013.01); H01L 27/2436 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 13/0097 (2013.01); G11C 2013/005 (2013.01); G11C 2013/009 (2013.01); G11C 2213/56 (2013.01); G11C 2213/79 (2013.01); H01L 29/785 (2013.01);
Abstract

A ReRAM memory array includes rows and columns of ReRAM cells. Each ReRAM cell in a row and column of the array includes a ReRAM device having an ion source end coupled to a bias line associated with the row of the array containing the ReRAM device. A first transistor is coupled between the solid electrolyte end of the ReRAM device and a bit line associated with the column of the array containing the ReRAM cell. The first transistor has a gate coupled to a first word line associated with the row containing the ReRAM cell. A second transistor is coupled between the solid electrolyte end of the ReRAM device and the bit line associated with the column of the array containing the ReRAM cell. The second transistor has a gate coupled to a second word line associated with the row containing the ReRAM cell.


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