The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Jun. 19, 2018
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Martin M. Frank, Dobbs Ferry, NY (US);
Renee T. Mo, Yorktown Heights, NY (US);
Vijay Narayanan, New York, NY (US);
John Rozen, Hastings-on-Hudson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Semiconductor devices and methods of making the same include forming a first channel region on a first semiconductor region. A second channel region is formed on a second semiconductor region, the second semiconductor region being formed from a semiconductor material that is different from a semiconductor material of the first semiconductor region. A gate dielectric layer is formed over one or more of the first and second channel regions. A nitrogen-containing layer is formed on the gate dielectric layer. A gate is formed on the gate dielectric.