The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Sep. 12, 2017
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Dao-Long Chen, Kaohsiung, TW;
Chih-Pin Hung, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/29 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 23/295 (2013.01); H01L 24/16 (2013.01); H01L 24/09 (2013.01); H01L 2224/16227 (2013.01);
Abstract
A substrate including a dielectric layer and a patterned conductive layer adjacent to the dielectric layer is provided. The patterned conductive layer comprises a first conductive pad, the first conductive pad comprises a first portion having a first concave sidewall. The substrate further includes a protection layer disposed on the patterned conductive layer, and the protection layer covers the first portion of the first conductive pad.