The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Sep. 12, 2017
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76834 (2013.01); H01L 23/53295 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 2224/02206 (2013.01); H01L 2224/02215 (2013.01); H01L 2224/0391 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/14 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/37001 (2013.01);
Abstract
A method of fabricating a semiconductor structure includes forming a conductive structure over a first passivation layer, depositing a first dielectric film continuously over the conductive structure, depositing a second dielectric film continuously over the first dielectric film, and depositing a third dielectric film over the second dielectric film. A portion of the third dielectric film is in contact with a portion of the first dielectric film.