The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Dec. 22, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Stefan Landis, Tullins, FR;

Nicolas Posseme, Sassenage, FR;

Lamia Nouri, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/3065 (2006.01); G03F 7/00 (2006.01); B82Y 40/00 (2011.01); C23C 14/04 (2006.01); C23C 14/48 (2006.01); H01L 21/306 (2006.01); H01L 33/00 (2010.01); H01L 33/22 (2010.01); B82Y 10/00 (2011.01); B81C 1/00 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/266 (2013.01); B82Y 40/00 (2013.01); C23C 14/042 (2013.01); C23C 14/48 (2013.01); G03F 7/0002 (2013.01); H01L 21/3065 (2013.01); H01L 21/30604 (2013.01); B81C 1/0046 (2013.01); B82Y 10/00 (2013.01); H01L 31/0392 (2013.01); H01L 31/1852 (2013.01); H01L 33/007 (2013.01); H01L 33/22 (2013.01);
Abstract

The invention relates in particular to a method for producing subsequent patterns in an underlying layer (), the method comprising at least one step of producing prior patterns in a carbon imprintable layer () on top of the underlying layer (), the production of the prior patterns involving nanoimprinting of the imprintable layer () and leave in place a continuous layer formed by the imprintable layer () and covering the underlying layer (), characterized in that it comprises the following step: at least one step of modifying the underlying layer () via ion implantation () in the underlying layer (), the implantation () being carried out through the imprintable layer () comprising the subsequent patterns, the parameters of the implantation () being chosen in such a way as to form, in the underlying layer (), implanted zones () and non-implanted zones, the non-implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.


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