The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Nov. 18, 2016
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Boo Hyun Ham, Yongin-si, KR;
Hyun Jae Kang, Gunpo-si, KR;
Sung Sik Park, Incheon, KR;
Yong Kug Bae, Hwaseong-si, KR;
Kwang Sub Yoon, Yongin-si, KR;
Bum Joon Youn, Suwon-si, KR;
Hyun Chang Lee, Gwangmyeong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of forming a pattern of a semiconductor device includes forming a mask and a sacrificial layer on a substrate, etching the sacrificial layer in a first area of the substrate to form first units, each having a first width and a first distance from an adjacent unit, etching the sacrificial layer in a second area of the substrate to form second units, each having a second width equal to the first distance and being spaced apart from an adjacent unit by a second distance equal to the first width, forming a spacer conformally covering the first and second units, the spacer having a first thickness and being merged between the second units, removing a portion of the spacer on upper surfaces of the first and second units, and etching the mask in a region from which first and second units have been removed.