The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2020
Filed:
Aug. 27, 2018
Zhongke Jingyuan Electron Limited, Beijing, CN;
Zhongke Jingyuan Electron Limited, Beijing, CN;
Abstract
Methods and apparatuses for laser-assisted electron-beam inspection (EBI) are provided. The apparatus includes an EBI device and a laser illumination device. The EBI device includes an e-beam source configured to emit an incident e-beam, a deflector configured to deflect the incident e-beam to be projected onto a surface of a semiconductor device, and an electron detector configured to detect emergent electrons generated by the incident e-beam projected onto the surface. The laser illumination device includes a laser source configured to generate a laser, and a guiding device configured to guide the laser to be projected onto the semiconductor device. The laser changes the emergent electrons to cause, in a positive mode of the EBI apparatus, a PN junction of an NMOS of the semiconductor device to be in a conduction state.