The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

Oct. 30, 2018
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Hiroaki Shishido, Tokyo, JP;

Osamu Nozawa, Tokyo, JP;

Takenori Kajiwara, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); H01L 21/027 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/10 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); G03F 1/58 (2012.01); G03F 1/80 (2012.01); G03F 7/20 (2006.01); G03F 7/34 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); C23C 14/0057 (2013.01); C23C 14/0641 (2013.01); C23C 14/0664 (2013.01); C23C 14/0676 (2013.01); C23C 14/10 (2013.01); C23C 14/185 (2013.01); C23C 14/3407 (2013.01); C23C 14/3464 (2013.01); G03F 1/58 (2013.01); G03F 1/80 (2013.01); G03F 7/2006 (2013.01); G03F 7/34 (2013.01); H01L 21/027 (2013.01);
Abstract

A mask blank with phase shift film where changes in transmittance and phase shift to an exposure light of an ArF excimer laser are suppressed. The film transmits light of an ArF excimer laser at a transmittance of 2% or more and less than 10% and generates a phase difference of 150 degrees or more and 190 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The film has a stacked lower layer and upper layer, the lower layer containing metal and silicon and substantially free of oxygen. The upper layer containing metal, silicon, nitrogen, and oxygen. The lower layer is thinner than the upper layer, and the ratio of metal to metal and silicon of the upper layer is less than the lower layer.


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