The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Nov. 15, 2012
Shih-wei Chen, Kaohsiung, TW;
Wen-chin Lee, Baoshan Township, TW;
Wen-tsai Yen, Caotun Township, TW;
Chung-hsien Wu, Luzhu Township, TW;
Kuan-chu Chen, Tainan, TW;
Shih-Wei Chen, Kaohsiung, TW;
Wen-Chin Lee, Baoshan Township, TW;
Wen-Tsai Yen, Caotun Township, TW;
Chung-Hsien Wu, Luzhu Township, TW;
Kuan-Chu Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.