The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Sep. 07, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Qing Cao, Yorktown Heights, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Zhengwen Li, Chicago, IL (US);
Fei Liu, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66477 (2013.01); H01L 29/51 (2013.01);
Abstract
A field effect transistor includes an exposed channel region disposed between a source region and a drain region. A gate electrode is disposed over the exposed channel region. An electrolyte gel is disposed between the gate electrode and the exposed channel region, wherein ions are immobilized in the electrolyte gel below a transition temperature and mobilized above the transition temperature to increase device resistance.