The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Jun. 03, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;

Inventors:

Chanho Kim, Seoul, KR;

Pansuk Kwak, Seoul, KR;

Chaehoon Kim, Suwon-si, KR;

Hongsoo Jeon, Suwon-si, KR;

Jeunghwan Park, Suwon-si, KR;

Bongsoon Lim, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 27/11582 (2017.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H01L 27/1157 (2017.01); G11C 16/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H01L 27/1157 (2013.01); G11C 16/08 (2013.01);
Abstract

At least one latch of a page buffer of a nonvolatile memory device includes a capacitor that selectively stores a voltage of a sensing node. The capacitor includes at least one first contact having a second height corresponding to a first height of each of cell strings, and at least one second contact to which a ground voltage is supplied. The at least one second contact has a third height corresponding to the first height, disposed adjacent to the at least one first contact, and electrically separated from the at least one first contact.


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