The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Nov. 07, 2017
Lam Research Corporation, Fremont, CA (US);
Sriharsha Jayanti, Fremont, CA (US);
Sangjun Cho, San Ramon, CA (US);
Steven Chuang, San Francisco, CA (US);
Hsu-Cheng Huang, Fremont, CA (US);
Jian Wu, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.