The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Jan. 05, 2016
Vishay-siliconix, Santa Clara, CA (US);
Hamilton Lu, Los Angeles, CA (US);
The-Tu Chau, San Jose, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Deva N. Pattanayak, Saratoga, CA (US);
Sharon Shi, San Jose, CA (US);
Kuo-In Chen, Los Altos, CA (US);
Robert Xu, Fremont, CA (US);
Vishay-Siliconix, Santa Clara, CA (US);
Abstract
Systems and methods for substrate wafer back side and edge cross section seals. In accordance with a first method embodiment, a silicon wafer of a first conductivity type is accessed. An epitaxial layer of the first conductivity type is grown on a front surface of the silicon wafer. The epitaxial layer is implanted to form a region of an opposite conductivity type. The growing and implanting are repeated to form a vertical column of the opposite conductivity type. The wafer may also be implanted to form a region of the opposite conductivity type vertically aligned with the vertical column.