The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2020
Filed:
Dec. 03, 2018
United Microelectronics Corp., Hsin-Chu, TW;
Su Xing, Singapore, SG;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A static random access memory (SRAM) cell structure includes a first inverter. The first inverter includes a first transistor and a second transistor. The first transistor includes a first source electrode and a first drain electrode. The first source electrode is connected to a first voltage source. The first source electrode includes a first doped region and a second doped region disposed in the first doped region, and a conductivity type of the second doped region is complementary to a conductivity type of the first doped region. The first drain electrode is connected to a first storage node. The second transistor includes a second source electrode and a second drain electrode. The second source electrode is connected to a second voltage source. The second drain electrode is connected to the first storage node.