The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2020

Filed:

Feb. 11, 2019
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Grace Chen, Los Gatos, CA (US);

Lawrence Muray, Moraga, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/956 (2006.01); G01N 21/95 (2006.01); G03F 7/20 (2006.01); H01J 37/20 (2006.01); H01J 37/28 (2006.01);
U.S. Cl.
CPC ...
G01N 21/9505 (2013.01); G03F 7/7065 (2013.01); H01J 37/20 (2013.01); H01J 37/28 (2013.01); H01J 2237/2817 (2013.01);
Abstract

Disclosed are apparatus and methods for detecting defects on a semiconductor sample. An optical inspector is first used to inspect a semiconductor sample with an aggressively predefined threshold selected to detect candidate defect and nuisance sites at corresponding locations across the sample. A high-resolution distributed probe inspector includes an array of miniature probes that are moved relative to the sample to scan and obtain a high-resolution image of each site to detect and separate the candidate defect sites from the nuisance sites. A higher-resolution probe is then used to obtain a higher-resolution image of each candidate site to obtain a high-resolution image of each site to separate real defects that adversely impact operation of any devices on the sample from the candidate defects.


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