The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Jan. 05, 2018
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama-shi, Kanagawa, JP;

Inventor:

Hajime Matsuda, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7783 (2013.01); H01L 21/0217 (2013.01); H01L 21/0254 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01); H01L 29/518 (2013.01); H01L 29/66462 (2013.01);
Abstract

A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents.


Find Patent Forward Citations

Matsuda, Hajime. (2020). Semiconductor device (U.S. Patent No. 10541322). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10541322

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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