The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2020

Filed:

Feb. 02, 2018
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yeon-tae Kim, Suwon-si, KR;

Do-hyung Kim, Hwaseong-si, KR;

Kwang-hyun Yang, Suwon-si, KR;

Chang-yun Lee, Hwaseong-si, KR;

Young-uk Choi, Seoul, KR;

Kee-soo Park, Hwaseong-si, KR;

Eun-sok Choi, Uiwang-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/95 (2006.01); G01N 21/88 (2006.01); H01L 21/66 (2006.01); H01L 21/687 (2006.01); G01B 11/24 (2006.01); G01B 11/06 (2006.01); G01N 21/55 (2014.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 21/67253 (2013.01); H01L 21/67265 (2013.01); H01L 21/68785 (2013.01);
Abstract

A method of inspecting a semiconductor substrate includes measuring light intensity of light reflected on the rotating semiconductor substrate, analyzing a frequency distribution of the measured light intensity, and determining a state of the semiconductor substrate by using the frequency distribution. The analyzing of the frequency distribution of the measured light intensity includes extracting a plurality of frequency components corresponding respectively to a plurality of frequencies from the measured light intensity.


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