The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Apr. 08, 2016
Applicant:
Mitsubishi Gas Chemical Company, Inc., Chiyoda-ku, JP;
Inventors:
Toshiyuki Oie, Tokyo, JP;
Kenji Shimada, Tokyo, JP;
Assignee:
MITSUBISHI GAS CHEMICAL COMPANY, INC., Chiyoda-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/32 (2006.01); C11D 1/40 (2006.01); C11D 1/62 (2006.01); H01L 21/304 (2006.01); C11D 3/04 (2006.01); C11D 11/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 1/40 (2013.01); C11D 1/62 (2013.01); C11D 3/042 (2013.01); C11D 11/0047 (2013.01); H01L 21/304 (2013.01); H01L 21/31111 (2013.01);
Abstract
It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.