The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
Apr. 24, 2017
Enkris Semiconductor, Inc, Jiangsu, CN;
Kai Cheng, Jiangsu, CN;
Peng Xiang, Jiangsu, CN;
ENKRIS SEMICONDUCTOR, INC, Jiangsu, CN;
Abstract
The invention provides a semiconductor structure and a method of preparing a semiconductor structure, which solves the problems of easy cracking, large warpage and large dislocation density which exist in epitaxial growth of a semiconductor compound epitaxial structure on a substrate in the prior art. The semiconductor structure includes: a substrate; at least one periodic structure disposed over the substrate; wherein each of the periodic structures includes at least one period, each period including a first periodic layer and a second periodic layer which are sequentially stacked in an epitaxial direction; wherein the thickness of the nth periodic structure is smaller than the thickness of the (n+1)th periodic structure, wherein n is an integer greater than or equal to 1.