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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10535728 B1

PDFFull Text
Date of Patent:
Jan. 14, 2020

Filed:

Jan. 11, 2019

Crystalline multilayer oxide thin films structure in semiconductor device

Applicant:

Flosfia Inc., Kyoto-shi, Kyoto, JP;

Inventors:

Toshimi Hitora, Kyoto, JP;

Masaya Oda, Kyoto, JP;

Assignee:

FLOSFIA INC., Kyoto-shi, JP;

Attorney:

Christensen O'Connor Johnson Kindness PLLC

Primary Examiner:

Didarul A Mazumder

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); H01L 21/477 (2006.01); H01L 29/26 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/0242 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02628 (2013.01); H01L 21/477 (2013.01); H01L 29/24 (2013.01); H01L 29/26 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract

Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

Find Patent Forward Citations

Hitora, Toshimi. (2020). Crystalline multilayer oxide thin films structure in semiconductor device (U.S. Patent No. 10535728). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10535728

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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