The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 14, 2020

Filed:

Nov. 09, 2018
Applicant:

Shenzhen Xpectvision Technology Co., Ltd., Shenzhen, CN;

Inventors:

Peiyan Cao, Shenzhen, CN;

Chongshen Song, Shenzhen, CN;

Yurun Liu, Shenzhen, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); G01T 1/17 (2006.01); G01T 3/08 (2006.01); G01T 1/24 (2006.01); A61B 6/03 (2006.01); G01T 1/20 (2006.01); G01T 1/29 (2006.01); H04N 5/32 (2006.01); H04N 5/367 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14658 (2013.01); A61B 6/032 (2013.01); G01T 1/17 (2013.01); G01T 1/2018 (2013.01); G01T 1/24 (2013.01); G01T 1/244 (2013.01); G01T 1/246 (2013.01); G01T 1/247 (2013.01); G01T 1/2964 (2013.01); G01T 3/08 (2013.01); H01L 27/14678 (2013.01); H01L 27/14689 (2013.01); H04N 5/32 (2013.01); H04N 5/367 (2013.01);
Abstract

Disclosed herein is an image sensor and a method of making the image sensor. The image sensor may comprise one or more packages of semiconductor radiation detectors. Each of the one or more packages may comprise a radiation detector that comprises a radiation absorption layer on a first strip of semiconductor wafer and an electronics layer on a second strip of semiconductor wafer. The radiation absorption layer may be continuous along the first strip of semiconductor wafer with no coverage gap. The first strip and the second strip may be longitudinally aligned and bonded together. The radiation detector may be mounted on a printed circuit board (PCB) and electrically connected to the PCB close to an edge of the radiation detector.


Find Patent Forward Citations

Quick Actions:

Cao, Peiyan. (2020). Methods of making semiconductor x-ray detector (U.S. Patent No. 10535703). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10535703

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…